This in turn, is expected to propel growth of the global next generation memory market.
CBRAM is a form of resistive RAM, which takes around 50 to 100 times less time to perform read and write operation as compared to NOR flash.
In 2015, Hewlett-Packard and SanDisk had announced an agreement to jointly develop ‘Storage Class Memory’ (SCM) resistive RAM that could replace DRAM and would be 1,000 times faster than NAND flash.
Artificial intelligence (AI) is group of methodology that focuses on formation of intelligent machines with the help of human intelligence such as visual perception, speech recognition, decision-making, and translation between languages.
High performance applications of artificial intelligence have increased the demand for high-bandwidth low potential data accesses through processors, storage, and IOs.
According to a press release, on September 2017, Intel introduced its new self-learning chip, which is able to make faster decisions from large unstructured data set.
The global next-generation memory market and its growth depend on many factors significantly, which is expecting growth at 45% CAGR during the forecast period (2016-2022), reveals Market Research Future (MRFR).
Also, during this growth course, the market might gather a valuation of USD ~8 billion.Top Impacting FactorsThe next-generation memory market is likely to gain momentum in support of the factors such as mounting demand for high scalable as well as fast and economical memory solutions.
With rising data, there is an increasing necessitate to manage and store the data and information for future references.
Also, mounting demand for flexible and wearable electronics may provide new avenues for market growth in the coming years.Furthermore, more factors such as intrinsic benefit with non-volatile memories, technological advancements for storage, high growth in the wearable electronics industry, rising adoption of MRAM & PCM memory rise in the practice of next-generation memory in smartphones, and enterprise storage also motivate the market growth over the forecast period.
On the contrary, some other factors, such as soaring designing cost and stability in extreme environmental conditions, could hinder market growth over the next six years.
In addition to this, low write endurance rates may act as a restraint to the next generation memory market.Get a Free Sample @ https://www.marketresearchfuture.com/sample_request/2448SegmentationThe further purpose of this study, Market Research Future has segmented the market of next-generation memory market among product and application.By the segment of the product, the market has included non-volatile memories, which further include Magneto-Resistive Random Access Memory (MRAM), Phase Change Memory (PCM), Ferroelectric RAM (FeRAM), and Resistive Random Access Memory (Re RAM.
