IGBT and Super Junction MOSFET are power semiconductor devices that are widely used in various industries like automotive, industrial, consumer electronics, renewable energy, and traction among others. They are used for applications like motor drives, ups systems, power supplies, home appliances, automotive electronics, solar & wind power generation systems etc. due to their high power handling capabilities.
The global IGBT and Super Junction MOSFET Market is estimated to be valued at US$ 16178.23 Mn in 2023 and is expected to exhibit a CAGR of 12% over the forecast period 2023 to 2030, as highlighted in a new report published by Coherent Market Insights.
Market Opportunity:
Increased vehicle electrification presents a major market opportunity for IGBT and Super Junction MOSFET. With growing demand for electric vehicles and hybrid vehicles globally due to stringent emission norms and push for greener transportation, power devices like IGBT and Super Junction MOSFET find widespread application in electric powertrains, on-board chargers, DC-DC converters etc. Electric drivetrains require efficient power switching and conversion which is provided by these power devices. Thus, the growing EV market directly translates to increased demand for IGBTs and Super Junction MOSFETs over the forecast period presenting a lucrative growth opportunity.
Porter's Analysis
Threat of new entrants: The threat of new entrants is moderate as the sector requires high capital investments and technological advancements. However, the sector is expected to grow significantly attracting new players.
Bargaining power of buyers: The bargaining power of buyers is high due to availability of a wide range of products from various key players and availability of substitutes. Buyers can negotiate on price and demand other value-added services.
Bargaining power of suppliers: The bargaining power of suppliers is moderate as key raw materials used in manufacturing IGBT and Super Junction MOSFET are commoditized. However, technology providers have some bargaining power.
Threat of new substitutes: The threat of new substitutes is high as new technologies are emerging that can replace IGBT and Super Junction MOSFET such as Silicon Carbide MOSFET and Gallium Nitride.
Competitive rivalry: The competitive rivalry is high due to presence of numerous global and regional players competing on the basis of product performance, pricing and innovation.
SWOT Analysis
Strength: High efficiency and high power handling capability compared to conventional MOSFETs. Growing demand for electric and hybrid vehicles is driving the market.
Weakness: High initial investment requirement for manufacturing facilities. Continuous technological advancements require high R&D spend.
Opportunity: Increasing deployment in renewable energy sources such as wind and solar. Rapid industrialization in Asia Pacific provides growth opportunities.
Threats: Availability of alternative technologies and susceptibility to fluctuating raw material prices. Trade war between the US and China affects global supply chain.
Key Takeaways
The Global IGBT And Super Junction MOSFET Market Size is expected to witness high growth driven by increasing electric vehicle sales and demand for renewable energy sources globally. The global IGBT and Super Junction MOSFET Market is estimated to be valued at US$ 16178.23 Mn in 2023 and is expected to exhibit a CAGR of 12% over the forecast period 2023 to 2030.
Asia Pacific dominates the market currently due to presence of key manufacturing countries such as China, Japan and presence of various chipset and device manufacturers. Significant government investments in India and Southeast Asian countries to develop renewable energy infrastructure will boost the regional market. Rising demand from the automotive industry along with government focus on deployment of renewable energy projects fuels the regional market growth.
Key players:
Key players operating in the IGBT and Super Junction MOSFET market are Infineon Technologies AG, Vishay Intertechnology, Inc., Mitsubishi Electric Corporation, STMicroelectronics N.V., Fuji Electric Co. Ltd., Toshiba Corporation, Hitachi Power Semiconductor Device Ltd., Fairchild Semiconductor International, Inc., Semikron Elektronik GmbH & Co. KG, and ABB Ltd.
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